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BYT52.
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
D D D D
Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics
Applications
Fast rectifiers and switches
94 9539
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFAV IFAV Tj=Tstg Value 50 100 200 400 600 800 1000 50 0.85 1.4 -65...+175 Unit V V V V V V V A A A C
Peak forward surge current Average forward current Average forward current Junction and storage temperature range
tp=10ms, half sinewave on PC board l=10mm, TL=25C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=150C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF IR IR trr Min Typ Max 1.3 5 150 200 Unit V
mA mA
ns
Document Number 86029 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 1 (4)
BYT52.
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 I R - Reverse Current ( mA ) 100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30
94 9448
1000
100 Scattering Limit 10
l
1 VR = VR RM 0 40 80 120 160 200
0.1
94 9552
l - Lead Length ( mm )
Tj - Junction Temperature ( C )
Figure 1. Max. Thermal Resistance vs. Lead Length
1.2 I FAV- Average Forward Current ( A )
Figure 4. Reverse Current vs. Junction Temperature
10 IF - Forward Current ( A )
1.0 0.8 0.6 0.4 0.2 0 0 40 80
VR = VR RM fv1kHz RthJA PC Board
v100K/W
Tj = 25C 1
Scattering Limit
0.1
0.01 120 160 200
94 9449
0
0.6
1.2
1.8
2.4
3.0
94 9447
Tamb - Ambient Temperature ( C )
VF - Forward Voltage ( V )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Forward Current vs. Forward Voltage
20 I FAV- Average Forward Current ( A ) 2.0 1.6 1.2 0.8 0.4 0 0
94 9446
VR = VR RM fv1kHz RthJA=45K/W l=10mm
CD - Diode Capacitance ( pF )
Tj = 25C 16
12
8
4 0
40
80
120
160
200
94 9451
0.1
1
10
100
Tamb - Ambient Temperature ( C )
VR - Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.de * FaxBack +1-408-970-5600 2 (4)
Document Number 86029 Rev. 2, 24-Jun-98
BYT52.
Vishay Telefunken Dimensions in mm
3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification
technical drawings according to DIN specifications 94 9538
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86029 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 3 (4)
BYT52.
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 4 (4)
Document Number 86029 Rev. 2, 24-Jun-98

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